NTLUD3A260PZTBG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

8 Weeks

Drain-source On Resistance-Max :

0.2Ohm

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

1.7A

Case Connection :

DRAIN

Surface Mount :

yes

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pin Count :

6

Continuous Drain Current (ID) :

1.3A

Element Configuration :

Dual

ECCN Code :

EAR99

Radiation Hardening :

No

Turn-Off Delay Time :

149 ns

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 4.5V

JESD-609 Code :

e3

Lead Free :

Lead Free

Turn On Delay Time :

17.4 ns

Rds On (Max) @ Id, Vgs :

200m Ω @ 2A, 4.5V

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Published :

2010

Power Dissipation :

800mW

FET Type :

2 P-Channel (Dual)

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 10V

Number of Elements :

2

Max Power Dissipation :

500mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

6

Fall Time (Typ) :

74 ns

Rise Time :

32.3ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Package / Case :

6-UFDFN Exposed Pad

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V