NTLUD3A260PZTAG
- Mfr.Part #
- NTLUD3A260PZTAG
- Manufacturer
- onsemi
- Package / Case
- 6-UFDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 1.3A 6UDFN
- Stock
- 73,251
- In Stock :
- 73,251
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn-Off Delay Time :
- 149 ns
- Element Configuration :
- Dual
- Mounting Type :
- Surface Mount
- FET Feature :
- Logic Level Gate
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Number of Terminations :
- 6
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 1.3A
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 1.7A
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 6
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 2
- Turn On Delay Time :
- 17.4 ns
- Lead Free :
- Lead Free
- Package / Case :
- 6-UFDFN Exposed Pad
- Rise Time :
- 32.3ns
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 8V
- Published :
- 2010
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 74 ns
- Height :
- 500μm
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Length :
- 1.6mm
- FET Type :
- 2 P-Channel (Dual)
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Power Dissipation :
- 800mW
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 2A, 4.5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Max Power Dissipation :
- 500mW
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 4.2nC @ 4.5V
- Width :
- 1.6mm
- Pbfree Code :
- yes
- Datasheets
- NTLUD3A260PZTAG

NTLUD3A260PZTAG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NTLUD3A260PZTAG Description
Small signal modeling is a commonly used analysis technique in electronic engineering, which is used to approximate the behavior of electronic circuits of nonlinear devices with linear equations. It is suitable for electronic circuits where the AC signal (that is, the time-varying current and voltage in the circuit) is very small compared to the DC bias current and voltage.
NTLUD3A260PZTAG Features
? Complementary N and P Channel Device
? Leading ?8.0 V Trench for Low RDS(on) Performance
? ESD Protected Gate ? ESD Rating: Class 1
? SC?88 Package for Small Footprint (2 x 2 mm)
? Pb?Free Packages are Available
NTLUD3A260PZTAG Applications
? DC?DC Conversion
? Load/Power Switching
? Single or Dual Cell Li?Ion Battery Supplied Devices
? Cell Phones, MP3s, Digital Cameras, PDAs
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