NTLUS3A18PZTBG
- Mfr.Part #
- NTLUS3A18PZTBG
- Manufacturer
- onsemi
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5.1A 6UDFN
- Stock
- 1,492
- In Stock :
- 1,492
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.018Ohm
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- -20V
- Pbfree Code :
- yes
- Rise Time :
- 15ns
- Power Dissipation-Max :
- 700mW Ta
- Gate to Source Voltage (Vgs) :
- 8V
- Vgs (Max) :
- ±8V
- Series :
- µCool™
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Radiation Hardening :
- No
- Factory Lead Time :
- 11 Weeks
- Fall Time (Typ) :
- 88 ns
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Package / Case :
- 6-UDFN Exposed Pad
- Power Dissipation :
- 1.7W
- Lead Free :
- Lead Free
- Published :
- 2012
- Number of Terminations :
- 6
- Turn-Off Delay Time :
- 150 ns
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 7A, 4.5V
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 5.1A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 6
- Turn On Delay Time :
- 8.6 ns
- Drain Current-Max (Abs) (ID) :
- 8.2A
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Pins :
- 6
- FET Type :
- P-Channel
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Continuous Drain Current (ID) :
- 5.1A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2240pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Additional Feature :
- ULTRA LOW RESISTANCE
- Datasheets
- NTLUS3A18PZTBG

P-Channel Tape & Reel (TR) 18m Ω @ 7A, 4.5V ±8V 2240pF @ 15V 28nC @ 4.5V 20V 6-UDFN Exposed Pad
NTLUS3A18PZTBG Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2240pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5.1A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8.2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 150 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
NTLUS3A18PZTBG Features
a continuous drain current (ID) of 5.1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 150 ns
a 20V drain to source voltage (Vdss)
NTLUS3A18PZTBG Applications
There are a lot of ON Semiconductor
NTLUS3A18PZTBG applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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