NTLGD3502NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

1.74W

Pulsed Drain Current-Max (IDM) :

17.2A

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

4.3A

Drain-source On Resistance-Max :

0.06Ohm

FET Feature :

Logic Level Gate

Terminal Form :

NO LEAD

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

Pbfree Code :

No

Qualification Status :

COMMERCIAL

Package / Case :

6-VDFN Exposed Pad

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Configuration :

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.3A, 4.5V

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

4.3A 3.6A

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Pin Count :

6

Transistor Element Material :

SILICON

JESD-30 Code :

S-PDSO-N6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Surface Mount :

yes