NTLGF3501NT2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

C BEND

Terminal Position :

Dual

Turn-Off Delay Time :

9 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Elements :

1

Power Dissipation-Max :

1.14W Ta

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

Pulsed Drain Current-Max (IDM) :

13.8A

Transistor Application :

SWITCHING

Radiation Hardening :

No

Pbfree Code :

yes

Published :

2006

Vgs(th) (Max) @ Id :

2V @ 250μA

Fall Time (Typ) :

13.6 ns

Series :

FETKY™

Turn On Delay Time :

4.8 ns

Number of Pins :

6

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Power Dissipation :

1.74W

Mounting Type :

Surface Mount

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

90m Ω @ 3.4A, 4.5V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Number of Terminations :

6

Drain-source On Resistance-Max :

0.09Ohm

Drain Current-Max (Abs) (ID) :

2.8A

Package / Case :

6-VDFN Exposed Pad

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3.4A

Pin Count :

6

Rise Time :

13.6ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

4 Weeks