NTLGF3501NT1G
- Mfr.Part #
- NTLGF3501NT1G
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 2.8A 6DFN
- Stock
- 45,553
- In Stock :
- 45,553
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- COMMERCIAL
- Pulsed Drain Current-Max (IDM) :
- 13.8A
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Terminal Finish :
- MATTE TIN
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.09Ohm
- Terminal Form :
- C BEND
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 3.4A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 275pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Ta
- DS Breakdown Voltage-Min :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 1.14W Ta
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Package / Case :
- 6-VDFN Exposed Pad
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs (Max) :
- ±12V
- Number of Terminations :
- 6
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 6
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Series :
- FETKY™
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-XDSO-C6
- Drain Current-Max (Abs) (ID) :
- 2.8A
- Drain to Source Voltage (Vdss) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Datasheets
- NTLGF3501NT1G

N-Channel Tape & Reel (TR) 90m Ω @ 3.4A, 4.5V ±12V 275pF @ 10V 10nC @ 4.5V 20V 6-VDFN Exposed Pad
NTLGF3501NT1G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 275pF @ 10V.A device's drain current is its maximum continuous current, and this device's drain current is 2.8A.A maximum pulsed drain current of 13.8A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
NTLGF3501NT1G Features
based on its rated peak drain current 13.8A.
a 20V drain to source voltage (Vdss)
NTLGF3501NT1G Applications
There are a lot of Rochester Electronics, LLC
NTLGF3501NT1G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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