NTE192A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Output Power :

Not Required(W)

Series :

-

Frequency - Transition :

-

Power - Max :

560 mW

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 3mA, 50mA

DC Current Gain-Min (hFE) :

180

Transistor Polarity :

NPN

Operating Temp Range :

-55C to 150C

Operating Temperature Classification :

Military

Current - Collector Cutoff (Max) :

100nA (ICBO)

Package Type :

TO-92HS

Transistor Type :

NPN

JESD-30 Code :

O-PBFM-W3

Collector-Emitter Voltage-Max :

50 V

Mounting Type :

Through Hole

Manufacturer :

NTE Electronics

Configuration :

Single

Emitter-Base Voltage :

5(V)

Rad Hardened :

No

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

500 mA

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.75

Category :

Bipolar Small Signal

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA, 4.5V

Terminal Form :

Wire

Voltage - Collector Emitter Breakdown (Max) :

50 V

Power Dissipation :

0.56(W)

Transistor Application :

SWITCHING

Package / Case :

TO-92HS

Product Status :

Active

Package Shape :

Round

Number of Terminals :

3

Collector Current-Max (IC) :

0.5 A

DC Current Gain :

180@

Operating Temperature :

150°C (TJ)

Transistor Element Material :

SILICON

Supplier Device Package :

TO-92HS

Subcategory :

Other Transistors

Polarity/Channel Type :

NPN

Power Dissipation-Max (Abs) :

0.6 W

Mounting :

Through Hole

Terminal Position :

BOTTOM

Surface Mount :

No

Collector Current (DC) :

0.5(A)

Collector-Base Voltage :

50(V)

Package :

Bag

Reach Compliance Code :

Unknown

Number of Elements :

1