NTE181MP
- Mfr.Part #
- NTE181MP
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 30A TO3
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 30 A
- DC Current Gain-Min (hFE) :
- 25
- Package / Case :
- TO-204AA, TO-3
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Package :
- Bag
- Number of Elements :
- 2
- Product Status :
- Active
- Series :
- -
- Configuration :
- SEPARATE, 2 ELEMENTS
- Manufacturer :
- NTE Electronics
- Collector Current-Max (IC) :
- 30 A
- Surface Mount :
- No
- Power - Max :
- 200 W
- HTS Code :
- 8541.29.00.95
- Additional Feature :
- MATCHED PAIR OF NTE181
- Current - Collector Cutoff (Max) :
- 1mA (ICBO)
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Power Dissipation Ambient-Max :
- 200 W
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Reach Compliance Code :
- Unknown
- Subcategory :
- BIP General Purpose Small Signal
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A, 2V
- Package Shape :
- Round
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 2MHz
- Terminal Form :
- PIN/PEG
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-3
- JESD-30 Code :
- O-MBFM-P2
- JEDEC-95 Code :
- TO-3
- Number of Terminals :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Datasheets
- NTE181MP

NPN -65°C ~ 200°C (TJ) 1mA (ICBO) 2 Elements SILICON NPN TO-204AA, TO-3 Through Hole
NTE181MP Overview
This device has a DC current gain of 25 @ 7.5A, 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 800mV @ 750mA, 7.5A means Ic has reached its maximum value(saturated).Product package TO-3 comes from the supplier.Collector Emitter Breakdown occurs at 100 VV - Maximum voltage.
NTE181MP Features
the DC current gain for this device is 25 @ 7.5A, 2V
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the supplier device package of TO-3
NTE181MP Applications
There are a lot of NTE Electronics, Inc
NTE181MP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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