NTE180

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Polarity :

PNP

Collector Current (DC) :

30(A)

Manufacturer :

NTE Electronics

Number of Elements :

1

Mounting :

Through Hole

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

200(W)

Current - Collector (Ic) (Max) :

30 A

ECCN Code :

EAR99

Transistor Type :

PNP

Package :

Bag

Current - Collector Cutoff (Max) :

1mA (ICBO)

Output Power :

Not Required(W)

Terminal Form :

PIN/PEG

Supplier Device Package :

TO-3

Category :

Bipolar Power

Configuration :

Single

Number of Terminals :

2

Polarity/Channel Type :

PNP

JESD-30 Code :

O-MBFM-P2

Operating Temperature :

-65°C ~ 200°C (TJ)

Rad Hardened :

No

Subcategory :

Other Transistors

Emitter-Base Voltage :

4(V)

Power Dissipation Ambient-Max :

200 W

Product Status :

Active

JEDEC-95 Code :

TO-3

Collector-Base Voltage :

100(V)

Frequency - Transition :

2MHz

Transistor Element Material :

SILICON

Pin Count :

2 +Tab

Package Type :

TO-3

DC Current Gain-Min (hFE) :

25

DC Current Gain :

25

Mounting Type :

Through Hole

Power - Max :

200 W

Operating Temp Range :

-65C to 200C

Package Shape :

Round

Package / Case :

TO-204AA, TO-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 7.5A, 2V

Frequency :

2(MHz)

Power Dissipation-Max (Abs) :

200 W

Case Connection :

COLLECTOR

Terminal Position :

BOTTOM

Reach Compliance Code :

Unknown

Collector Current-Max (IC) :

30 A

Transistor Application :

AMPLIFIER

Operating Temperature Classification :

Military

Surface Mount :

No

Vce Saturation (Max) @ Ib, Ic :

800mV @ 750mA, 7.5A

Series :

-

Voltage - Collector Emitter Breakdown (Max) :

100 V

Collector-Emitter Voltage-Max :

90 V