NTE164
- Mfr.Part #
- NTE164
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 1A TO3
- Stock
- 84
- In Stock :
- 84
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Operating Temperature :
- 150 °C
- Power Dissipation-Max (Abs) :
- 50 W
- Transistor Polarity :
- NPN
- Series :
- -
- Frequency - Transition :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 2A, 15V
- Power Dissipation Ambient-Max :
- 50 W
- Operating Temp Range :
- -65C to 150C
- Collector-Base Voltage :
- 1500(V)
- Frequency :
- 3(MHz)
- Product Status :
- Active
- JEDEC-95 Code :
- TO-3
- Terminal Form :
- PIN/PEG
- Manufacturer :
- NTE Electronics
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Supplier Device Package :
- TO-3
- ECCN Code :
- EAR99
- Package Shape :
- Round
- Package / Case :
- TO-204AA, TO-3
- Current - Collector (Ic) (Max) :
- 1 A
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Collector Base Voltage (VCBO) :
- 1.5 kV
- Voltage - Collector Emitter Breakdown (Max) :
- 700 V
- Mounting :
- Through Hole
- Rad Hardened :
- No
- Package :
- Bag
- Operating Temperature Classification :
- Military
- Package Type :
- TO-3
- Operating Temperature :
- 150°C (TJ)
- Output Power :
- Not Required(W)
- Collector Current-Max (IC) :
- 1 A
- Category :
- Bipolar Power
- Pin Count :
- 2 +Tab
- Power Dissipation :
- 50(W)
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 8.5V @ 600mA, 2A
- Min Operating Temperature :
- -65 °C
- Number of Elements :
- 1
- RoHS :
- Compliant
- Reach Compliance Code :
- Unknown
- DC Current Gain-Min (hFE) :
- 5
- Subcategory :
- Other Transistors
- Max Collector Current :
- 1 A
- Power - Max :
- 50 W
- HTS Code :
- 8541.29.00.95
- Emitter-Base Voltage :
- 5(V)
- Surface Mount :
- No
- Number of Terminals :
- 2
- Emitter Base Voltage (VEBO) :
- 5 V
- Configuration :
- Single
- Mount :
- Through Hole
- JESD-30 Code :
- O-MBFM-P2
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Terminal Position :
- BOTTOM
- Collector Current (DC) :
- 1(A)
- Case Connection :
- COLLECTOR
- Datasheets
- NTE164

NPN 150°C (TJ) 10μA (ICBO) 1 Elements SILICON NPN TO-204AA, TO-3 Through Hole
NTE164 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5 @ 2A, 15V.When VCE saturation is 8.5V @ 600mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5 V can achieve high levels of efficiency.Supplier package TO-3 contains the product.The device has a 700 V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 1 A volts can be achieved.
NTE164 Features
the DC current gain for this device is 5 @ 2A, 15V
the vce saturation(Max) is 8.5V @ 600mA, 2A
the emitter base voltage is kept at 5 V
the supplier device package of TO-3
NTE164 Applications
There are a lot of NTE Electronics, Inc
NTE164 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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