NTE163A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

100 W

Number of Elements :

1

Operating Temperature :

-65°C ~ 115°C (TJ)

HTS Code :

8541.29.00.95

Configuration :

Single

Package Shape :

Round

Terminal Form :

PIN/PEG

Power - Max :

12.5 W

Product Status :

Active

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Frequency - Transition :

4MHz

JEDEC-95 Code :

TO-3

Subcategory :

Other Transistors

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

5V @ 2A, 4.5A

Package :

Bag

Number of Terminals :

2

Transistor Element Material :

SILICON

DC Current Gain-Min (hFE) :

2.25

JESD-30 Code :

O-MBFM-P2

Manufacturer :

NTE Electronics

Qualification Status :

Not Qualified

Collector-Emitter Voltage-Max :

700 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

2.25 @ 4.5A, 5V

Collector Current-Max (IC) :

5 A

Current - Collector (Ic) (Max) :

5 A

Current - Collector Cutoff (Max) :

1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

-

Terminal Position :

BOTTOM

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

700 V

Package / Case :

TO-204AA, TO-3

Supplier Device Package :

TO-3

Power Dissipation Ambient-Max :

100 W