NTE163A

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Mfr.Part #
NTE163A
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
TRANS NPN 700V 5A TO3
Stock
74
In Stock :
74

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
12.5 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
AMPLIFIER
Vce Saturation (Max) @ Ib, Ic :
5V @ 2A, 4.5A
Supplier Device Package :
TO-3
Reach Compliance Code :
Unknown
Number of Elements :
1
DC Current Gain-Min (hFE) :
2.25
Number of Terminals :
2
Case Connection :
COLLECTOR
Transistor Type :
NPN
Collector-Emitter Voltage-Max :
700 V
HTS Code :
8541.29.00.95
Polarity/Channel Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
700 V
Transistor Element Material :
SILICON
Frequency - Transition :
4MHz
Package Shape :
Round
JEDEC-95 Code :
TO-3
Power Dissipation Ambient-Max :
100 W
Current - Collector (Ic) (Max) :
5 A
Product Status :
Active
Mounting Type :
Through Hole
Series :
-
Terminal Form :
PIN/PEG
Package / Case :
TO-204AA, TO-3
Configuration :
Single
Qualification Status :
Not Qualified
Subcategory :
Other Transistors
Manufacturer :
NTE Electronics
JESD-30 Code :
O-MBFM-P2
Surface Mount :
No
Package :
Bag
Power Dissipation-Max (Abs) :
100 W
Current - Collector Cutoff (Max) :
1mA
Operating Temperature :
-65°C ~ 115°C (TJ)
Collector Current-Max (IC) :
5 A
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
2.25 @ 4.5A, 5V
Terminal Position :
BOTTOM
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE163A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-204AA, TO-3, Operating Temperature:-65°C ~ 115°C (TJ), NTE163A pinout, NTE163A datasheet PDF, NTE163A amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE163A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE163A


NPN -65°C ~ 115°C (TJ) 1mA 1 Elements SILICON NPN TO-204AA, TO-3 Through Hole

NTE163A Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2.25 @ 4.5A, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 5V @ 2A, 4.5A.The product comes in the supplier device package of TO-3.There is a setting of 700 V for maximal collector-Emitter voltage.A 700 V maximal voltage - Collector Emitter Breakdown is present in the device.

NTE163A Features


the DC current gain for this device is 2.25 @ 4.5A, 5V
the vce saturation(Max) is 5V @ 2A, 4.5A
the supplier device package of TO-3


NTE163A Applications


There are a lot of NTE Electronics, Inc
NTE163A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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