NTE163A
- Mfr.Part #
- NTE163A
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 5A TO3
- Stock
- 74
- In Stock :
- 74
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 12.5 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 2A, 4.5A
- Supplier Device Package :
- TO-3
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- DC Current Gain-Min (hFE) :
- 2.25
- Number of Terminals :
- 2
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Collector-Emitter Voltage-Max :
- 700 V
- HTS Code :
- 8541.29.00.95
- Polarity/Channel Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 700 V
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 4MHz
- Package Shape :
- Round
- JEDEC-95 Code :
- TO-3
- Power Dissipation Ambient-Max :
- 100 W
- Current - Collector (Ic) (Max) :
- 5 A
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Series :
- -
- Terminal Form :
- PIN/PEG
- Package / Case :
- TO-204AA, TO-3
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Subcategory :
- Other Transistors
- Manufacturer :
- NTE Electronics
- JESD-30 Code :
- O-MBFM-P2
- Surface Mount :
- No
- Package :
- Bag
- Power Dissipation-Max (Abs) :
- 100 W
- Current - Collector Cutoff (Max) :
- 1mA
- Operating Temperature :
- -65°C ~ 115°C (TJ)
- Collector Current-Max (IC) :
- 5 A
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2.25 @ 4.5A, 5V
- Terminal Position :
- BOTTOM
- Datasheets
- NTE163A
NTE163A Documents

NPN -65°C ~ 115°C (TJ) 1mA 1 Elements SILICON NPN TO-204AA, TO-3 Through Hole
NTE163A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2.25 @ 4.5A, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 5V @ 2A, 4.5A.The product comes in the supplier device package of TO-3.There is a setting of 700 V for maximal collector-Emitter voltage.A 700 V maximal voltage - Collector Emitter Breakdown is present in the device.
NTE163A Features
the DC current gain for this device is 2.25 @ 4.5A, 5V
the vce saturation(Max) is 5V @ 2A, 4.5A
the supplier device package of TO-3
NTE163A Applications
There are a lot of NTE Electronics, Inc
NTE163A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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