NTE16001

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

35 V

JESD-30 Code :

R-PSIP-T3

Collector Base Voltage (VCBO) :

45 V

RoHS :

Compliant

Reach Compliance Code :

Unknown

Current - Collector (Ic) (Max) :

50 mA

Emitter Base Voltage (VEBO) :

4 V

Power - Max :

600 mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10mA, 10V

Current - Collector Cutoff (Max) :

10μA

Mounting Type :

Through Hole

Series :

-

Product Status :

Active

HTS Code :

8541.21.00.75

Max Operating Temperature :

150 °C

Package / Case :

3-SIP

Collector Current-Max (IC) :

0.05 A

Terminal Form :

THROUGH-HOLE

Transistor Application :

AMPLIFIER

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Max Collector Current :

50 mA

Mount :

Through Hole

Transistor Element Material :

SILICON

Operating Temperature :

150°C (TJ)

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Package :

Bag

Collector-Emitter Voltage-Max :

35 V

Subcategory :

Other Transistors

Qualification Status :

Not Qualified

Min Operating Temperature :

-55 °C

Supplier Device Package :

3-SIP

Power Dissipation-Max (Abs) :

0.6 W

Configuration :

Single

Number of Terminals :

3

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Collector-Base Capacitance-Max :

1.5 pF

Frequency - Transition :

500MHz

Terminal Position :

Single

Manufacturer :

NTE Electronics

Number of Pins :

3

Voltage - Collector Emitter Breakdown (Max) :

35 V

Surface Mount :

No

Package Shape :

RECTANGULAR