NTE16001

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

45 V

Emitter Base Voltage (VEBO) :

4 V

RoHS :

Compliant

Mount :

Through Hole

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

35 V

Current - Collector (Ic) (Max) :

50 mA

Number of Pins :

3

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Power - Max :

600 mW

Collector Emitter Voltage (VCEO) :

35 V

Transistor Element Material :

SILICON

Collector-Emitter Voltage-Max :

35 V

Max Operating Temperature :

150 °C

Surface Mount :

No

Number of Terminals :

3

Mounting Type :

Through Hole

Frequency - Transition :

500MHz

Series :

-

Min Operating Temperature :

-55 °C

Collector Current-Max (IC) :

0.05 A

Product Status :

Active

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

10μA

Subcategory :

Other Transistors

ECCN Code :

EAR99

Number of Elements :

1

Package / Case :

3-SIP

Operating Temperature :

150°C (TJ)

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10mA, 10V

Terminal Position :

Single

Configuration :

Single

HTS Code :

8541.21.00.75

JESD-30 Code :

R-PSIP-T3

Package :

Bag

Manufacturer :

NTE Electronics

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Collector-Base Capacitance-Max :

1.5 pF

Power Dissipation-Max (Abs) :

0.6 W

Max Collector Current :

50 mA

Supplier Device Package :

3-SIP

Terminal Form :

THROUGH-HOLE

Reach Compliance Code :

Unknown

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA