NTE159

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

MSL :

MSL 1 - Unlimited

Operating Temp Range :

-55C to 150C

DC Current Gain-Min (hFE) :

30

Series :

-

Power Dissipation-Max (Abs) :

0.6 W

Pin Count :

3

Power - Max :

625 mW

ECCN Code :

EAR99

Power Dissipation :

0.625(W)

Additional Feature :

LOW NOISE

Collector-Base Voltage :

80(V)

Transistor Type :

PNP

Element Configuration :

Single

Transition Frequency :

250MHz

Current - Collector Cutoff (Max) :

50nA (ICBO)

Number of Terminals :

3

Collector Emitter Voltage (VCEO) :

80 V

Collector Current (DC) :

0.8(A)

Current - Collector (Ic) (Max) :

800 mA

Package Shape :

Round

Output Power :

Not Required(W)

Max Frequency :

500 MHz

Continuous Collector Current :

800mA

Emitter Base Voltage (VEBO) :

5 V

Subcategory :

Other Transistors

Max Operating Temperature :

150 °C

Category :

Bipolar Small Signal

JESD-30 Code :

O-PBCY-W3

Frequency - Transition :

-

Collector Current-Max (IC) :

1 A

Polarity :

PNP

Package :

Bag

Number of Pins :

3

Emitter-Base Voltage :

5(V)

Surface Mount :

No

HTS Code :

8541.21.00.95

JEDEC-95 Code :

TO-92

Collector-Emitter Voltage-Max :

80 V

Collector Emitter Breakdown Voltage :

-80 V

Schedule B :

8541210080

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Manufacturer :

NTE Electronics

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 10V

Number of Elements :

1

Product Status :

Active

Max Power Dissipation :

625 mW

Transistor Polarity :

PNP

Width :

4.191 mm

Qualification Status :

Not Qualified

Frequency :

500(MHz)

Height :

5.334 mm

Mounting Type :

Through Hole

Operating Temperature Classification :

Military

Transistor Application :

SWITCHING

Operating Temperature :

-55°C ~ 150°C (TJ)

Max Collector Current :

1 A

Weight :

7.257478 g

REACH SVHC :

Unknown

RoHS :

Compliant

Polarity/Channel Type :

PNP

Reach Compliance Code :

Unknown

Configuration :

Single

Qualification :

-

Min Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Wire

Terminal Position :

BOTTOM

Mounting :

Through Hole

Mount :

Through Hole

Rad Hardened :

No

Supplier Device Package :

TO-92

Collector Base Voltage (VCBO) :

80 V

Package Type :

TO-92

Voltage - Collector Emitter Breakdown (Max) :

80 V

Collector Emitter Saturation Voltage :

150 mV

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Length :

5.1816 mm