NTE157

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package Shape :

RECTANGULAR

Emitter-Base Voltage :

6(V)

Surface Mount :

No

Transistor Element Material :

SILICON

Product Status :

Active

Package / Case :

TO-225AA, TO-126-3

Transistor Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA, 10V

Number of Elements :

1

Mounting :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

300 V

DC Current Gain-Min (hFE) :

5

Current - Collector (Ic) (Max) :

500 mA

Power Dissipation :

20(W)

Current - Collector Cutoff (Max) :

100μA

Power Dissipation-Max (Abs) :

20 W

Package :

Bag

Transistor Application :

AMPLIFIER

Power - Max :

20 W

Pin Count :

3 +Tab

JESD-30 Code :

R-PSFM-W3

Collector-Base Voltage :

325(V)

Configuration :

Single

Transistor Type :

NPN

Power Dissipation Ambient-Max :

20 W

Subcategory :

Other Transistors

Collector Current (DC) :

0.1(A)

Frequency - Transition :

10MHz

Number of Terminals :

3

Terminal Position :

Single

JEDEC-95 Code :

TO-126

Collector-Emitter Voltage-Max :

300 V

Terminal Form :

Wire

Supplier Device Package :

TO-126

Output Power :

Not Required(W)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Operating Temperature :

-65°C ~ 150°C (TJ)

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Operating Temp Range :

-65C to 150C

Manufacturer :

NTE Electronics

Mounting Type :

Through Hole

Frequency :

10(MHz)

DC Current Gain :

25

Vce Saturation (Max) @ Ib, Ic :

10V @ 100mA, 500mA

Series :

-

Operating Temperature Classification :

Military

Collector Current-Max (IC) :

0.5 A

Category :

Bipolar Power

Rad Hardened :

No

Package Type :

TO-126