NTE157

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Mounting :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA, 10V

Manufacturer :

NTE Electronics

Collector-Emitter Voltage-Max :

300 V

Voltage - Collector Emitter Breakdown (Max) :

300 V

Terminal Position :

Single

Collector Current-Max (IC) :

0.5 A

Power Dissipation Ambient-Max :

20 W

Vce Saturation (Max) @ Ib, Ic :

10V @ 100mA, 500mA

JEDEC-95 Code :

TO-126

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Subcategory :

Other Transistors

Package Shape :

RECTANGULAR

Power Dissipation :

20(W)

Operating Temperature Classification :

Military

Operating Temperature :

-65°C ~ 150°C (TJ)

JESD-30 Code :

R-PSFM-W3

Transistor Type :

NPN

ECCN Code :

EAR99

Operating Temp Range :

-65C to 150C

Frequency - Transition :

10MHz

Current - Collector (Ic) (Max) :

500 mA

Supplier Device Package :

TO-126

Collector Current (DC) :

0.1(A)

Rad Hardened :

No

Package / Case :

TO-225AA, TO-126-3

Current - Collector Cutoff (Max) :

100μA

Number of Elements :

1

Package :

Bag

Power Dissipation-Max (Abs) :

20 W

Category :

Bipolar Power

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Number of Terminals :

3

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Frequency :

10(MHz)

Collector-Base Voltage :

325(V)

Terminal Form :

Wire

DC Current Gain :

25

Transistor Polarity :

NPN

Output Power :

Not Required(W)

Package Type :

TO-126

Configuration :

Single

Surface Mount :

No

Product Status :

Active

Series :

-

DC Current Gain-Min (hFE) :

5

Power - Max :

20 W

Emitter-Base Voltage :

6(V)

Pin Count :

3 +Tab