NTE155

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Mfr.Part #
NTE155
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
TRANS NPN 32V 1A TO66
Stock
4,368
In Stock :
4,368

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Collector-Emitter Voltage-Max :
20 V
Series :
-
Frequency - Transition :
-
Supplier Device Package :
TO-66
Number of Elements :
1
Power - Max :
6 W
Product Status :
Active
Terminal Form :
PIN/PEG
Number of Terminals :
2
Package :
Bag
Terminal Position :
BOTTOM
Vce Saturation (Max) @ Ib, Ic :
80mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce :
36 @ 1A, 0V
Current - Collector Cutoff (Max) :
1mA
Configuration :
Single
JESD-30 Code :
O-MBFM-P2
Surface Mount :
No
HTS Code :
8541.29.00.95
Package / Case :
TO-213AA, TO-66-2
Voltage - Collector Emitter Breakdown (Max) :
32 V
Mounting Type :
Through Hole
Manufacturer :
NTE Electronics
Transistor Type :
NPN
JEDEC-95 Code :
TO-66
ECCN Code :
EAR99
Transistor Element Material :
GERMANIUM
Polarity/Channel Type :
NPN
Case Connection :
COLLECTOR
Operating Temperature :
90°C (TJ)
Qualification Status :
Not Qualified
Package Shape :
Round
Collector Current-Max (IC) :
1 A
Power Dissipation-Max (Abs) :
7.5 W
Transistor Application :
AMPLIFIER
Power Dissipation Ambient-Max :
7.5 W
DC Current Gain-Min (hFE) :
36
Subcategory :
Other Transistors
Reach Compliance Code :
Unknown
Current - Collector (Ic) (Max) :
1 A
Datasheets
NTE155
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE155 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-213AA, TO-66-2, Mounting Type:Through Hole, Operating Temperature:90°C (TJ), NTE155 pinout, NTE155 datasheet PDF, NTE155 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE155 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE155


NPN 90°C (TJ) 1mA 1 Elements GERMANIUM NPN TO-213AA, TO-66-2 Through Hole

NTE155 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 36 @ 1A, 0V.When VCE saturation is 80mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-66 contains the product.Voltage maximal between collector and emitter is set to 20 V.The device has a 32 V maximal voltage - Collector Emitter Breakdown.

NTE155 Features


the DC current gain for this device is 36 @ 1A, 0V
the vce saturation(Max) is 80mV @ 100mA, 1A
the supplier device package of TO-66


NTE155 Applications


There are a lot of NTE Electronics, Inc
NTE155 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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