NTE153MCP

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Mfr.Part #
NTE153MCP
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 90V 4A TO220
Stock
18
In Stock :
18

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
90 V
Terminal Position :
Single
Reach Compliance Code :
Unknown
Manufacturer :
NTE Electronics
Power Dissipation Ambient-Max :
50 W
Frequency - Transition :
8MHz
Power - Max :
40 W
Terminal Form :
THROUGH-HOLE
ECCN Code :
EAR99
Package / Case :
TO-220-3
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 500mA, 5V
Case Connection :
COLLECTOR
Qualification Status :
Not Qualified
Additional Feature :
MATCHED COMPLIMENTARY PAIR CONTAINS NTE152 AND NTE153
Surface Mount :
No
Current - Collector Cutoff (Max) :
20µA (ICBO)
Transistor Type :
PNP
Subcategory :
BIP General Purpose Small Signal
Number of Terminals :
3
Polarity/Channel Type :
NPN AND PNP
JEDEC-95 Code :
TO-220AB
Collector Current-Max (IC) :
7 A
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Pin Count :
3
Package :
Bag
Current - Collector (Ic) (Max) :
4 A
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 300mA, 3A
Transistor Application :
AMPLIFIER
Operating Temperature :
150°C (TJ)
Collector-Emitter Voltage-Max :
60 V
Number of Elements :
2
Configuration :
SEPARATE, 2 ELEMENTS
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Series :
-
DC Current Gain-Min (hFE) :
60
Datasheets
NTE153MCP
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE153MCP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:150°C (TJ), Mounting Type:Through Hole, NTE153MCP pinout, NTE153MCP datasheet PDF, NTE153MCP amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE153MCP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE153MCP


PNP 150°C (TJ) 20μA (ICBO) 2 Elements SILICON NPN AND PNP TO-220-3 Through Hole

NTE153MCP Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 500mA, 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 300mA, 3A.This product comes in a TO-220 device package from the supplier.A maximal collector-emitter voltage setting of 60 V is available.Device displays Collector Emitter Breakdown (90 V maximal voltage).

NTE153MCP Features


the DC current gain for this device is 40 @ 500mA, 5V
the vce saturation(Max) is 1.5V @ 300mA, 3A
the supplier device package of TO-220


NTE153MCP Applications


There are a lot of NTE Electronics, Inc
NTE153MCP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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