NTE129MCP
- Mfr.Part #
- NTE129MCP
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO39
- Stock
- 55
- In Stock :
- 55
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-39
- DC Current Gain-Min (hFE) :
- 90
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 1.25 W
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA, 5V
- Terminal Form :
- Wire
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Frequency - Transition :
- -
- Subcategory :
- BIP General Purpose Small Signal
- Pin Count :
- 3
- Package :
- Bag
- Polarity/Channel Type :
- NPN AND PNP
- Product Status :
- Active
- Transistor Type :
- PNP
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- JESD-30 Code :
- O-MBCY-W3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- HTS Code :
- 8541.29.00.75
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Surface Mount :
- No
- Series :
- -
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Collector-Emitter Voltage-Max :
- 80 V
- Terminal Position :
- BOTTOM
- Additional Feature :
- MATCHED COMPLIMENTARY PAIR CONTAINS NTE128 AND NTE129
- Collector Current-Max (IC) :
- 1 A
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- Case Connection :
- COLLECTOR
- Number of Elements :
- 2
- Configuration :
- SEPARATE, 2 ELEMENTS
- Manufacturer :
- NTE Electronics
- Current - Collector (Ic) (Max) :
- 1 A
- JEDEC-95 Code :
- TO-39
- Mounting Type :
- Through Hole
- Package Shape :
- Round
- Transistor Application :
- AMPLIFIER
- Datasheets
- NTE129MCP

PNP -65°C ~ 200°C (TJ) 50nA (ICBO) 2 Elements SILICON NPN AND PNP TO-205AD, TO-39-3 Metal Can Through Hole
NTE129MCP Overview
In this device, the DC current gain is 100 @ 100mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Product comes in the supplier's device package TO-39.80 V is set as the maximum collector-emitter voltage.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.
NTE129MCP Features
the DC current gain for this device is 100 @ 100mA, 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-39
NTE129MCP Applications
There are a lot of NTE Electronics, Inc
NTE129MCP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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