NTE129MCP

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Mfr.Part #
NTE129MCP
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 80V 1A TO39
Stock
55
In Stock :
55

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Supplier Device Package :
TO-39
DC Current Gain-Min (hFE) :
90
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power - Max :
1.25 W
Operating Temperature :
-65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA, 5V
Terminal Form :
Wire
Current - Collector Cutoff (Max) :
50nA (ICBO)
Frequency - Transition :
-
Subcategory :
BIP General Purpose Small Signal
Pin Count :
3
Package :
Bag
Polarity/Channel Type :
NPN AND PNP
Product Status :
Active
Transistor Type :
PNP
Package / Case :
TO-205AD, TO-39-3 Metal Can
JESD-30 Code :
O-MBCY-W3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
HTS Code :
8541.29.00.75
Voltage - Collector Emitter Breakdown (Max) :
80 V
Surface Mount :
No
Series :
-
Number of Terminals :
3
Transistor Element Material :
SILICON
Collector-Emitter Voltage-Max :
80 V
Terminal Position :
BOTTOM
Additional Feature :
MATCHED COMPLIMENTARY PAIR CONTAINS NTE128 AND NTE129
Collector Current-Max (IC) :
1 A
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Reach Compliance Code :
Unknown
Case Connection :
COLLECTOR
Number of Elements :
2
Configuration :
SEPARATE, 2 ELEMENTS
Manufacturer :
NTE Electronics
Current - Collector (Ic) (Max) :
1 A
JEDEC-95 Code :
TO-39
Mounting Type :
Through Hole
Package Shape :
Round
Transistor Application :
AMPLIFIER
Datasheets
NTE129MCP
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE129MCP from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-205AD, TO-39-3 Metal Can, Mounting Type:Through Hole, NTE129MCP pinout, NTE129MCP datasheet PDF, NTE129MCP amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE129MCP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE129MCP


PNP -65°C ~ 200°C (TJ) 50nA (ICBO) 2 Elements SILICON NPN AND PNP TO-205AD, TO-39-3 Metal Can Through Hole

NTE129MCP Overview


In this device, the DC current gain is 100 @ 100mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Product comes in the supplier's device package TO-39.80 V is set as the maximum collector-emitter voltage.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.

NTE129MCP Features


the DC current gain for this device is 100 @ 100mA, 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-39


NTE129MCP Applications


There are a lot of NTE Electronics, Inc
NTE129MCP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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