NTE128P

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package Type :

TO-237

Series :

-

Package Shape :

Round

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 350mA, 2V

Output Power :

Not Required(W)

Subcategory :

Other Transistors

Emitter-Base Voltage :

5(V)

Transistor Polarity :

NPN

Supplier Device Package :

TO-237

HTS Code :

8541.21.00.95

Current - Collector (Ic) (Max) :

1 A

Transistor Type :

NPN

Operating Temp Range :

-55C to 150C

JESD-30 Code :

O-PBCY-T3

Voltage - Collector Emitter Breakdown (Max) :

80 V

DC Current Gain-Min (hFE) :

100

Number of Elements :

1

Number of Terminals :

3

Configuration :

Single

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Rad Hardened :

No

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Operating Temperature Classification :

Military

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation :

0.85(W)

Collector-Emitter Voltage-Max :

80 V

Surface Mount :

No

Frequency :

50(MHz)

Product Status :

Active

Power - Max :

850 mW

Manufacturer :

NTE Electronics

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

1 W

Vce Saturation (Max) @ Ib, Ic :

-

Frequency - Transition :

50MHz

Collector Current (DC) :

1(A)

Package :

Bag

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Package / Case :

TO-237AA

Collector Current-Max (IC) :

1 A

Mounting :

Through Hole

JEDEC-95 Code :

TO-237AA

Collector-Base Voltage :

100(V)

Category :

Bipolar Power

Current - Collector Cutoff (Max) :

100nA (ICBO)