NTE128

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

0.8(W)

Rad Hardened :

No

Power Dissipation-Max (Abs) :

1 W

Power - Max :

800 mW

HTS Code :

8541.21.00.95

Surface Mount :

No

Number of Terminals :

3

Mounting Type :

Through Hole

Collector Current-Max (IC) :

1 A

Transistor Application :

SWITCHING

Category :

Bipolar Power

Case Connection :

COLLECTOR

JESD-30 Code :

O-MBCY-W3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Current (DC) :

1(A)

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

10nA (ICBO)

Number of Elements :

1

Emitter-Base Voltage :

7(V)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-39

Series :

-

Operating Temperature Classification :

Military

Voltage - Collector Emitter Breakdown (Max) :

80 V

Supplier Device Package :

TO-39

Configuration :

Single

Collector-Base Voltage :

140(V)

DC Current Gain-Min (hFE) :

15

Manufacturer :

NTE Electronics

Package / Case :

TO-205AD, TO-39-3 Metal Can

Terminal Position :

BOTTOM

Pin Count :

3

Operating Temperature :

-65°C ~ 200°C (TJ)

Subcategory :

Other Transistors

Package :

Bag

Terminal Form :

Wire

Collector-Emitter Voltage-Max :

80 V

Frequency :

400(MHz)

Current - Collector (Ic) (Max) :

1 A

Mounting :

Through Hole

Product Status :

Active

Frequency - Transition :

400MHz

DC Current Gain :

50

Transistor Polarity :

NPN

Package Type :

TO-39

Transistor Type :

NPN

ECCN Code :

EAR99

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Operating Temp Range :

-65C to 200C

Package Shape :

Round

Output Power :

Not Required(W)