NTE128

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Frequency - Transition :

400MHz

Transistor Polarity :

NPN

Collector-Base Voltage :

140(V)

Operating Temp Range :

-65C to 200C

Transistor Type :

NPN

Package :

Bag

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN

Power - Max :

800 mW

Mounting :

Through Hole

Frequency :

400(MHz)

Terminal Form :

Wire

Output Power :

Not Required(W)

Qualification Status :

Not Qualified

Rad Hardened :

No

Current - Collector (Ic) (Max) :

1 A

Package / Case :

TO-205AD, TO-39-3 Metal Can

Product Status :

Active

Transistor Application :

SWITCHING

Number of Elements :

1

JESD-30 Code :

O-MBCY-W3

Package Type :

TO-39

JEDEC-95 Code :

TO-39

Voltage - Collector Emitter Breakdown (Max) :

80 V

Number of Terminals :

3

Terminal Position :

BOTTOM

Collector-Emitter Voltage-Max :

80 V

Emitter-Base Voltage :

7(V)

ECCN Code :

EAR99

Package Shape :

Round

Operating Temperature :

-65°C ~ 200°C (TJ)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

HTS Code :

8541.21.00.95

Series :

-

Supplier Device Package :

TO-39

Collector Current (DC) :

1(A)

Collector Current-Max (IC) :

1 A

DC Current Gain-Min (hFE) :

15

Power Dissipation :

0.8(W)

Operating Temperature Classification :

Military

Current - Collector Cutoff (Max) :

10nA (ICBO)

Case Connection :

COLLECTOR

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Category :

Bipolar Power

DC Current Gain :

50

Surface Mount :

No

Subcategory :

Other Transistors

Manufacturer :

NTE Electronics

Transistor Element Material :

SILICON

Configuration :

Single

Power Dissipation-Max (Abs) :

1 W