NTE123AP

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

DC Current Gain :

20

Emitter-Base Voltage :

6(V)

Current - Collector Cutoff (Max) :

100nA

Product Status :

Active

Mounting Type :

Through Hole

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Operating Temperature Classification :

Military

Package Type :

TO-92

Series :

-

Mounting :

Through Hole

Transistor Polarity :

NPN

Package :

Bag

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Configuration :

Single

Manufacturer :

NTE Electronics

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

625 mW

Category :

Bipolar Small Signal

Output Power :

Not Required(W)

Collector Current (DC) :

0.6(A)

Frequency - Transition :

250MHz

Supplier Device Package :

TO-92

Voltage - Collector Emitter Breakdown (Max) :

40 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 1V

Power Dissipation :

0.35(W)

Operating Temp Range :

-55C to 150C

Transistor Type :

NPN

Frequency :

250(MHz)

Current - Collector (Ic) (Max) :

600 mA

Collector-Base Voltage :

60(V)

Rad Hardened :

No