NTE123A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package :

Bag

Power Dissipation :

0.35(W)

DC Current Gain :

20

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Current - Collector (Ic) (Max) :

600 mA

Category :

Bipolar Small Signal

Voltage - Collector Emitter Breakdown (Max) :

40 V

Collector Current (DC) :

0.6(A)

Series :

-

Operating Temperature Classification :

Military

Frequency - Transition :

250MHz

Number of Elements :

1

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Type :

NPN

Supplier Device Package :

TO-92

Transistor Polarity :

NPN

Emitter-Base Voltage :

6(V)

Power - Max :

625 mW

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Pin Count :

3

Configuration :

Single

Collector-Base Voltage :

60(V)

Mounting :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 1V

Rad Hardened :

No

Mounting Type :

Through Hole

Output Power :

Not Required(W)

Product Status :

Active

Operating Temp Range :

-55C to 150C

Manufacturer :

NTE Electronics

Current - Collector Cutoff (Max) :

100nA

Frequency :

250(MHz)

Package Type :

TO-92