NTE123
- Mfr.Part #
- NTE123
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.8A TO39
- Stock
- 366
- In Stock :
- 366
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Mounting :
- Through Hole
- Package Shape :
- Round
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- DC Current Gain-Min (hFE) :
- 40
- Current - Collector (Ic) (Max) :
- 800 mA
- RoHS :
- Compliant
- Max Power Dissipation :
- 800 mW
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- JEDEC-95 Code :
- TO-39
- Package :
- Bag
- Schedule B :
- 8541210080, 8541210080/8541210080/8541210080/8541210080/8541210080
- Pin Count :
- 3
- Collector-Emitter Voltage-Max :
- 40 V
- Supplier Device Package :
- TO-39
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Terminal Form :
- Wire
- Collector-Base Voltage :
- 75(V)
- Transistor Application :
- SWITCHING
- Weight :
- 7.257478 g
- Transition Frequency :
- 300 MHz
- Configuration :
- Single
- Max Operating Temperature :
- 200 °C
- Frequency - Transition :
- 300MHz
- Power - Max :
- 800 mW
- Operating Temp Range :
- -65C to 200C
- Emitter-Base Voltage :
- 6(V)
- ECCN Code :
- EAR99
- Category :
- Bipolar Small Signal
- Case Connection :
- COLLECTOR
- Collector Current-Max (IC) :
- 0.8 A
- Height :
- 6.604 mm
- Subcategory :
- Other Transistors
- Emitter Base Voltage (VEBO) :
- 6 V
- Current - Collector Cutoff (Max) :
- 10nA
- Collector Emitter Voltage (VCEO) :
- 40 V
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 800 mA
- Package Type :
- TO-39
- Collector Emitter Breakdown Voltage :
- 40 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Polarity :
- NPN
- Product Status :
- Active
- Series :
- -
- Number of Pins :
- 3
- DC Current Gain :
- 35
- Diameter :
- 9.39 mm
- Number of Elements :
- 1
- Manufacturer :
- NTE Electronics
- Rad Hardened :
- No
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- Collector Current (DC) :
- 0.8(A)
- Collector Emitter Saturation Voltage :
- 1 V
- Reach Compliance Code :
- Unknown
- HTS Code :
- 8541.21.00.75
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Width :
- 76.2 mm
- Length :
- 152.4 mm
- Power Dissipation :
- 0.8(W)
- Transistor Polarity :
- NPN
- Frequency :
- 300(MHz)
- Collector Base Voltage (VCBO) :
- 75 V
- Output Power :
- Not Required(W)
- Power Dissipation-Max (Abs) :
- 0.8 W
- Number of Terminals :
- 3
- Operating Temperature Classification :
- Military
- Min Operating Temperature :
- -65 °C
- JESD-30 Code :
- O-MBCY-W3
- Surface Mount :
- No
- Datasheets
- NTE123

NTE123 datasheet pdf and Discrete Semiconductor Products product details from NTE Electronics, Inc. stock available at
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