NTD78N03T4G
- Mfr.Part #
- NTD78N03T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 11.4A/78A DPAK
- Stock
- 45,083
- In Stock :
- 45,083
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Drain-source On Resistance-Max :
- 0.006Ohm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Avalanche Energy Rating (Eas) :
- 722.5 mJ
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 210A
- DS Breakdown Voltage-Min :
- 25V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 78A, 10V
- Power Dissipation-Max :
- 1.4W Ta 64W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Ta 78A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 11.4A
- Pin Count :
- 3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.25pF @ 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 25V
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Datasheets
- NTD78N03T4G

N-Channel Tape & Reel (TR) 6m Ω @ 78A, 10V ±20V 2.25pF @ 12V 35nC @ 4.5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD78N03T4G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 722.5 mJ.A device's maximal input capacitance is 2.25pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 11.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 210A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTD78N03T4G Features
the avalanche energy rating (Eas) is 722.5 mJ
based on its rated peak drain current 210A.
a 25V drain to source voltage (Vdss)
NTD78N03T4G Applications
There are a lot of Rochester Electronics, LLC
NTD78N03T4G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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