NTD70N03RT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A Ta 32A Tc

Avalanche Energy Rating (Eas) :

71.7 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

25V

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

13.2nC @ 5V

Surface Mount :

yes

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

32A

Input Capacitance (Ciss) (Max) @ Vds :

1.333pF @ 20V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

25V

Pin Count :

3

Qualification Status :

COMMERCIAL

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.36W Ta 62.5W Tc

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

140A

Drain-source On Resistance-Max :

0.013Ohm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON