NTD70N03RT4
- Mfr.Part #
- NTD70N03RT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 10A/32A DPAK
- Stock
- 9,255
- In Stock :
- 9,255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- COMMERCIAL
- Power Dissipation-Max :
- 1.36W Ta 62.5W Tc
- JESD-609 Code :
- e0
- Drain to Source Voltage (Vdss) :
- 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 71.7 mJ
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.333pF @ 20V
- Pbfree Code :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 140A
- Drain Current-Max (Abs) (ID) :
- 32A
- DS Breakdown Voltage-Min :
- 25V
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- TIN LEAD
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta 32A Tc
- Peak Reflow Temperature (Cel) :
- 240
- Drain-source On Resistance-Max :
- 0.013Ohm
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 20A, 10V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 13.2nC @ 5V
- Datasheets
- NTD70N03RT4

N-Channel Tape & Reel (TR) 8m Ω @ 20A, 10V ±20V 1.333pF @ 20V 13.2nC @ 5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD70N03RT4 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 71.7 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.333pF @ 20V maximal input capacitance.A device can conduct a maximum continuous current of [32A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 140A.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NTD70N03RT4 Features
the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 140A.
a 25V drain to source voltage (Vdss)
NTD70N03RT4 Applications
There are a lot of Rochester Electronics, LLC
NTD70N03RT4 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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