NTD70N03R-001

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.36W Ta 62.5W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

140A

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

25V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.013Ohm

Terminal Finish :

TIN LEAD

Surface Mount :

yes

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

71.7 mJ

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

10A Ta 32A Tc

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Drain Current-Max (Abs) (ID) :

32A

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.333pF @ 20V

Number of Elements :

1

DS Breakdown Voltage-Min :

25V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

240

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

13.2nC @ 5V

JESD-609 Code :

e0