NTD3817NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

1.2W Ta 25.9W Tc

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

78A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

15 mJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

16V

DS Breakdown Voltage-Min :

16V

Drain-source On Resistance-Max :

0.029Ohm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

7.6A

Terminal Position :

Single

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

702pF @ 12V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 15A, 10V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7.6A Ta 34.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Terminal Finish :

Tin

Surface Mount :

yes

Vgs (Max) :

±16V

Number of Elements :

1

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V