NTD3817NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Drain Current-Max (Abs) (ID) :

7.6A

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

15 mJ

Drain to Source Voltage (Vdss) :

16V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

78A

Terminal Finish :

Tin

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 4.5V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.029Ohm

Current - Continuous Drain (Id) @ 25°C :

7.6A Ta 34.5A Tc

Case Connection :

DRAIN

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

16V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

702pF @ 12V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Power Dissipation-Max :

1.2W Ta 25.9W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 15A, 10V

FET Type :

N-Channel

Mounting Type :

Surface Mount