NTD3055-150-1
- Mfr.Part #
- NTD3055-150-1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CHAN 9A 60V DPAK STR
- Stock
- 17,400
- In Stock :
- 17,400
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 9A
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.15Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSIP-T3
- Pulsed Drain Current-Max (IDM) :
- 27A
- Drain to Source Voltage (Vdss) :
- 60V
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 4.5A, 10V
- Avalanche Energy Rating (Eas) :
- 30 mJ
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Power Dissipation-Max :
- 1.5W Ta 28.8W Tj
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- Datasheets
- NTD3055-150-1

N-Channel Tube 150m Ω @ 4.5A, 10V ±20V 280pF @ 25V 15nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA
NTD3055-150-1G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 30 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 280pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 27A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
NTD3055-150-1G Features
the avalanche energy rating (Eas) is 30 mJ
based on its rated peak drain current 27A.
a 60V drain to source voltage (Vdss)
NTD3055-150-1G Applications
There are a lot of Rochester Electronics, LLC
NTD3055-150-1G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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