NTD3055-150-1

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Mfr.Part #
NTD3055-150-1
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CHAN 9A 60V DPAK STR
Stock
17,400
In Stock :
17,400

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±20V
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
9A
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.15Ohm
Current - Continuous Drain (Id) @ 25°C :
9A Ta
Mounting Type :
Through Hole
Surface Mount :
No
Case Connection :
DRAIN
Qualification Status :
COMMERCIAL
Number of Elements :
1
JESD-30 Code :
R-PSIP-T3
Pulsed Drain Current-Max (IDM) :
27A
Drain to Source Voltage (Vdss) :
60V
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
60V
Input Capacitance (Ciss) (Max) @ Vds :
280pF @ 25V
Rds On (Max) @ Id, Vgs :
150m Ω @ 4.5A, 10V
Avalanche Energy Rating (Eas) :
30 mJ
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Terminal Position :
Single
Power Dissipation-Max :
1.5W Ta 28.8W Tj
Terminal Finish :
MATTE TIN
FET Type :
N-Channel
Datasheets
NTD3055-150-1
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD3055-150-1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, NTD3055-150-1 pinout, NTD3055-150-1 datasheet PDF, NTD3055-150-1 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD3055-150-1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD3055-150-1


N-Channel Tube 150m Ω @ 4.5A, 10V ±20V 280pF @ 25V 15nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA

NTD3055-150-1G Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 30 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 280pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 27A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

NTD3055-150-1G Features


the avalanche energy rating (Eas) is 30 mJ
based on its rated peak drain current 27A.
a 60V drain to source voltage (Vdss)


NTD3055-150-1G Applications


There are a lot of Rochester Electronics, LLC
NTD3055-150-1G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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