NTD3055-094-1
- Mfr.Part #
- NTD3055-094-1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A IPAK
- Stock
- 27,396
- In Stock :
- 27,396
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- JESD-609 Code :
- e0
- Drain to Source Breakdown Voltage :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 45A
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Avalanche Energy Rating (Eas) :
- 61 mJ
- Fall Time (Typ) :
- 23.9 ns
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Power Dissipation :
- 48W
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.094Ohm
- HTS Code :
- 8541.29.00.95
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Reach Compliance Code :
- not_compliant
- Voltage - Rated DC :
- 60V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Lead Free :
- Contains Lead
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 12A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 32.3ns
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 25.2 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Continuous Drain Current (ID) :
- 12A
- Mounting Type :
- Through Hole
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 235
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 94m Ω @ 6A, 10V
- Power Dissipation-Max :
- 1.5W Ta 48W Tj
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Datasheets
- NTD3055-094-1

N-Channel Tube 94m Ω @ 6A, 10V ±20V 450pF @ 25V 20nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
NTD3055-094-1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 61 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 450pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25.2 ns.Peak drain current for this device is 45A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
NTD3055-094-1 Features
the avalanche energy rating (Eas) is 61 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25.2 ns
based on its rated peak drain current 45A.
NTD3055-094-1 Applications
There are a lot of ON Semiconductor
NTD3055-094-1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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