NTD3055-094
- Mfr.Part #
- NTD3055-094
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A DPAK
- Stock
- 4,785
- In Stock :
- 4,785
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Pin Count :
- 3
- Current Rating :
- 12A
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 12A
- HTS Code :
- 8541.29.00.95
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 61 mJ
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 1.5W Ta 48W Tj
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 32.3ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 48W
- Fall Time (Typ) :
- 23.9 ns
- Turn-Off Delay Time :
- 25.2 ns
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.094Ohm
- Number of Pins :
- 3
- Voltage - Rated DC :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 45A
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Pbfree Code :
- No
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 94m Ω @ 6A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 240
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Published :
- 2007
- Case Connection :
- DRAIN
- Datasheets
- NTD3055-094

N-Channel Tube 94m Ω @ 6A, 10V ±20V 450pF @ 25V 20nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3055-094 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 61 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 450pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [25.2 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 45A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
NTD3055-094 Features
the avalanche energy rating (Eas) is 61 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25.2 ns
based on its rated peak drain current 45A.
NTD3055-094 Applications
There are a lot of ON Semiconductor
NTD3055-094 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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