NTD3817N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7.6A Ta 34.5A Tc

Packaging :

Tube

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.029Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Terminal Finish :

Tin

Drain to Source Voltage (Vdss) :

16V

Avalanche Energy Rating (Eas) :

15 mJ

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

78A

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

7.6A

Surface Mount :

No

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 4.5V

Power Dissipation-Max :

1.2W Ta 25.9W Tc

Input Capacitance (Ciss) (Max) @ Vds :

702pF @ 12V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 15A, 10V

Pbfree Code :

yes

JESD-609 Code :

e3

Package / Case :

TO-251-3 Stub Leads, IPak

DS Breakdown Voltage-Min :

16V