NTD3817N-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

16V

Terminal Form :

Flat

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

16V

JESD-30 Code :

R-PSSO-F3

Drain Current-Max (Abs) (ID) :

7.6A

FET Type :

N-Channel

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 15A, 10V

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

15 mJ

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 4.5V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.029Ohm

Power Dissipation-Max :

1.2W Ta 25.9W Tc

Vgs (Max) :

±16V

Transistor Application :

SWITCHING

Terminal Finish :

Tin

JESD-609 Code :

e3

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

78A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

702pF @ 12V

Number of Elements :

1

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

7.6A Ta 34.5A Tc

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA