NTD3813N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

12.8nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

114A

Power Dissipation-Max :

1.2W Ta 34.9W Tc

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Elements :

1

Vgs (Max) :

±16V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

963pF @ 12V

Current - Continuous Drain (Id) @ 25°C :

9.6A Ta 51A Tc

Number of Terminations :

3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Pbfree Code :

yes

Package / Case :

TO-251-3 Stub Leads, IPak

Terminal Position :

Single

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

16V

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

16V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0145Ohm

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G3

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

8.75m Ω @ 15A, 10V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

15 mJ

Terminal Finish :

Tin

Drain Current-Max (Abs) (ID) :

9.6A