NTD3808NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

16V

Vgs (Max) :

±16V

Reach Compliance Code :

Unknown

Pin Count :

3

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

12A Ta 76A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1.66pF @ 12V

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 15A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

29.4 mJ

Power Dissipation-Max :

1.3W Ta 52W Tc

Terminal Position :

Single

Terminal Finish :

Tin

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Voltage (Vdss) :

16V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Number of Terminations :

2

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Drain-source On Resistance-Max :

0.0085Ohm

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

12A

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

152A