NTD3808NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

16V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

152A

Drain Current-Max (Abs) (ID) :

12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Terminations :

2

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

12A Ta 76A Tc

Pin Count :

3

Surface Mount :

yes

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Power Dissipation-Max :

1.3W Ta 52W Tc

Drain-source On Resistance-Max :

0.0085Ohm

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1.66pF @ 12V

Qualification Status :

COMMERCIAL

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

29.4 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

DS Breakdown Voltage-Min :

16V

Terminal Finish :

Tin

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 15A, 10V