NTD3808NT4G

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Mfr.Part #
NTD3808NT4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 16V 12A/76A DPAK
Stock
13,526
In Stock :
13,526

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
16V
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
3
Terminal Form :
Gull wing
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
152A
Drain-source On Resistance-Max :
0.0085Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
yes
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Application :
SWITCHING
Vgs (Max) :
±16V
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin
Rds On (Max) @ Id, Vgs :
5.8m Ω @ 15A, 10V
Qualification Status :
COMMERCIAL
Current - Continuous Drain (Id) @ 25°C :
12A Ta 76A Tc
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
16V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
1.66pF @ 12V
Power Dissipation-Max :
1.3W Ta 52W Tc
Reach Compliance Code :
Unknown
Avalanche Energy Rating (Eas) :
29.4 mJ
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 4.5V
Terminal Position :
Single
Pbfree Code :
yes
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Number of Terminations :
2
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Drain Current-Max (Abs) (ID) :
12A
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSSO-G2
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD3808NT4G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, NTD3808NT4G pinout, NTD3808NT4G datasheet PDF, NTD3808NT4G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD3808NT4G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD3808NT4G


N-Channel Tape & Reel (TR) 5.8m Ω @ 15A, 10V ±16V 1.66pF @ 12V 21nC @ 4.5V 16V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD3808NT4G Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 29.4 mJ.A device's maximum input capacitance is 1.66pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 12A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 152A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 16V.To operate this transistor, you need to apply a 16V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

NTD3808NT4G Features


the avalanche energy rating (Eas) is 29.4 mJ
based on its rated peak drain current 152A.
a 16V drain to source voltage (Vdss)


NTD3808NT4G Applications


There are a lot of Rochester Electronics, LLC
NTD3808NT4G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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