NTD32N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Continuous Drain Current (ID) :

32A

Pulsed Drain Current-Max (IDM) :

90A

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.026ohm

Rds On (Max) @ Id, Vgs :

26m Ω @ 16A, 10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

32A Ta

Drain to Source Breakdown Voltage :

60V

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

31 ns

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2010

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

60V

Pin Count :

3

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

84ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.5W Ta 93.75W Tj

Number of Terminations :

2

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1725pF @ 25V

Current Rating :

32A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Fall Time (Typ) :

93 ns

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Power Dissipation :

93.75W