NTD32N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

31 ns

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1725pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

26m Ω @ 16A, 10V

Fall Time (Typ) :

93 ns

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Published :

2010

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Mount :

Surface Mount

Pin Count :

3

FET Type :

N-Channel

Power Dissipation-Max :

1.5W Ta 93.75W Tj

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

84ns

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

32A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Number of Elements :

1

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Power Dissipation :

93.75W

JESD-609 Code :

e3

Number of Terminations :

2

ECCN Code :

EAR99

Current Rating :

32A

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

32A Ta

Pulsed Drain Current-Max (IDM) :

90A

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Voltage - Rated DC :

60V

Number of Pins :

3

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.026ohm

Vgs(th) (Max) @ Id :

4V @ 250µA