NTD32N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

Power Dissipation :

93.75W

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

32A Ta

Drain-source On Resistance-Max :

0.028Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Voltage - Rated DC :

24V

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Fall Time (Typ) :

128 ns

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Lead Free :

Lead Free

Element Configuration :

Single

Continuous Drain Current (ID) :

32A

Packaging :

Tape and Reel (TR)

Pin Count :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PSSO-G2

Rise Time :

221ns

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 5V

Pulsed Drain Current-Max (IDM) :

90A

Number of Elements :

1

Turn-Off Delay Time :

37 ns

Mount :

Surface Mount

Number of Terminations :

2

Published :

2005

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

1.5W Ta 93.75W Tj

Number of Pins :

3

Pbfree Code :

yes

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

30A

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

28m Ω @ 16A, 5V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V