NTD32N06L

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Mfr.Part #
NTD32N06L
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 32A DPAK
Stock
28,869
In Stock :
28,869

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
1700pF @ 25V
Vgs(th) (Max) @ Id :
2V @ 250μA
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Pin Count :
3
Transistor Element Material :
SILICON
RoHS Status :
Non-RoHS Compliant
Voltage - Rated DC :
60V
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tube
Continuous Drain Current (ID) :
32A
Current - Continuous Drain (Id) @ 25°C :
32A Ta
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 5V
Number of Elements :
1
Power Dissipation-Max :
1.5W Ta 93.75W Tj
FET Type :
N-Channel
Additional Feature :
LOGIC LEVEL COMPATIBLE
Power Dissipation :
93.75W
HTS Code :
8541.29.00.95
Pulsed Drain Current-Max (IDM) :
90A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Fall Time (Typ) :
128 ns
Mounting Type :
Surface Mount
Terminal Finish :
Tin/Lead (Sn/Pb)
Rise Time :
221ns
JESD-30 Code :
R-PSSO-G2
Turn-Off Delay Time :
37 ns
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
240
JESD-609 Code :
e0
Rds On (Max) @ Id, Vgs :
28m Ω @ 16A, 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
not_compliant
Drain to Source Breakdown Voltage :
60V
Time@Peak Reflow Temperature-Max (s) :
30
Current Rating :
32A
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
5V
Published :
2007
Vgs (Max) :
±20V
Number of Terminations :
2
Mount :
Surface Mount
Lead Free :
Contains Lead
Drain-source On Resistance-Max :
0.028Ohm
Qualification Status :
Not Qualified
Datasheets
NTD32N06L
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD32N06L from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, NTD32N06L pinout, NTD32N06L datasheet PDF, NTD32N06L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD32N06L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD32N06L


N-Channel Tube 28m Ω @ 16A, 5V ±20V 1700pF @ 25V 50nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD32N06L Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1700pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 37 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 90A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 5V volts (5V).

NTD32N06L Features


a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 90A.


NTD32N06L Applications


There are a lot of ON Semiconductor
NTD32N06L applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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