NTD32N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

60V

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

32A

HTS Code :

8541.29.00.95

Voltage - Rated DC :

60V

Rise Time :

84ns

Drain-source On Resistance-Max :

0.026ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin/Lead (Sn/Pb)

Case Connection :

DRAIN

Power Dissipation :

93.75W

Fall Time (Typ) :

93 ns

Published :

2009

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

32A Ta

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

90A

Input Capacitance (Ciss) (Max) @ Vds :

1725pF @ 25V

Terminal Form :

Gull wing

FET Type :

N-Channel

Pin Count :

3

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.5W Ta 93.75W Tj

Avalanche Energy Rating (Eas) :

313 mJ

Number of Terminations :

2

Packaging :

Tube

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

26m Ω @ 16A, 10V

Peak Reflow Temperature (Cel) :

240

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

31 ns

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Transistor Element Material :

SILICON

Current Rating :

32A

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30