NTD32N06-001

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Mfr.Part #
NTD32N06-001
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 60V 32A IPAK
Stock
32,958
In Stock :
32,958

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
1.5W Ta 93.75W Tj
Lead Free :
Contains Lead
Turn-Off Delay Time :
31 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
60V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Voltage - Rated DC :
60V
Vgs (Max) :
±20V
Published :
2009
Current - Continuous Drain (Id) @ 25°C :
32A Ta
Fall Time (Typ) :
93 ns
Continuous Drain Current (ID) :
32A
Input Capacitance (Ciss) (Max) @ Vds :
1725pF @ 25V
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Rise Time :
84ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
RoHS Status :
Non-RoHS Compliant
Rds On (Max) @ Id, Vgs :
26m Ω @ 16A, 10V
Power Dissipation :
93.75W
Element Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Current Rating :
32A
FET Type :
N-Channel
Datasheets
NTD32N06-001
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD32N06-001 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~175°C TJ, NTD32N06-001 pinout, NTD32N06-001 datasheet PDF, NTD32N06-001 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD32N06-001 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD32N06-001


N-Channel Tube 26m Ω @ 16A, 10V ±20V 1725pF @ 25V 60nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

NTD32N06-001 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1725pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

NTD32N06-001 Features


a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 31 ns


NTD32N06-001 Applications


There are a lot of ON Semiconductor
NTD32N06-001 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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