NTD30N02T4

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Mfr.Part #
NTD30N02T4
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 24V 30A DPAK
Stock
22,731
In Stock :
22,731

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Terminal Finish :
Tin/Lead (Sn/Pb)
Lead Free :
Contains Lead
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Current Rating :
30A
Number of Terminations :
2
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 20V
Rds On (Max) @ Id, Vgs :
14.5m Ω @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 4.5V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Case Connection :
DRAIN
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
235
Continuous Drain Current (ID) :
30A
Terminal Form :
Gull wing
Power Dissipation-Max :
75W Tj
HTS Code :
8541.29.00.95
Operating Mode :
ENHANCEMENT MODE
Published :
2005
Mount :
Surface Mount
JESD-609 Code :
e0
Reach Compliance Code :
not_compliant
Number of Elements :
1
Rise Time :
28ns
Terminal Position :
Single
Drain-source On Resistance-Max :
0.0145Ohm
Avalanche Energy Rating (Eas) :
50 mJ
Voltage - Rated DC :
24V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Current - Continuous Drain (Id) @ 25°C :
30A Ta
RoHS Status :
Non-RoHS Compliant
Vgs(th) (Max) @ Id :
3V @ 250µA
JESD-30 Code :
R-PSSO-G2
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
100A
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Datasheets
NTD30N02T4
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD30N02T4 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, NTD30N02T4 pinout, NTD30N02T4 datasheet PDF, NTD30N02T4 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD30N02T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD30N02T4


N-Channel Tape & Reel (TR) 14.5m Ω @ 30A, 10V ±20V 1000pF @ 20V 20nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD30N02T4 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1000pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

NTD30N02T4 Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 100A.


NTD30N02T4 Applications


There are a lot of ON Semiconductor
NTD30N02T4 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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