NTD30N02T4
- Mfr.Part #
- NTD30N02T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 30A DPAK
- Stock
- 22,731
- In Stock :
- 22,731
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Current Rating :
- 30A
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 20V
- Rds On (Max) @ Id, Vgs :
- 14.5m Ω @ 30A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 235
- Continuous Drain Current (ID) :
- 30A
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 75W Tj
- HTS Code :
- 8541.29.00.95
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2005
- Mount :
- Surface Mount
- JESD-609 Code :
- e0
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Rise Time :
- 28ns
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.0145Ohm
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Voltage - Rated DC :
- 24V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta
- RoHS Status :
- Non-RoHS Compliant
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-30 Code :
- R-PSSO-G2
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 100A
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Datasheets
- NTD30N02T4

N-Channel Tape & Reel (TR) 14.5m Ω @ 30A, 10V ±20V 1000pF @ 20V 20nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD30N02T4 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1000pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTD30N02T4 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 100A.
NTD30N02T4 Applications
There are a lot of ON Semiconductor
NTD30N02T4 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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