NTD30N02G
- Mfr.Part #
- NTD30N02G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 30A DPAK
- Stock
- 20,623
- In Stock :
- 20,623
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- MATTE TIN
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1pF @ 20V
- Drain-source On Resistance-Max :
- 0.0145Ohm
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- FET Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 75W Tj
- Drain Current-Max (Abs) (ID) :
- 30A
- Pulsed Drain Current-Max (IDM) :
- 100A
- Rds On (Max) @ Id, Vgs :
- 14.5m Ω @ 30A, 10V
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 24V
- Drain to Source Voltage (Vdss) :
- 24V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- Datasheets
- NTD30N02G

N-Channel Tube 14.5m Ω @ 30A, 10V ±20V 1pF @ 20V 20nC @ 4.5V 24V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD30N02G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 50 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1pF @ 20V.A device's drain current is its maximum continuous current, and this device's drain current is 30A.A maximum pulsed drain current of 100A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 24V.In order to operate this transistor, a voltage of 24V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
NTD30N02G Features
the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 100A.
a 24V drain to source voltage (Vdss)
NTD30N02G Applications
There are a lot of Rochester Electronics, LLC
NTD30N02G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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