NTD3055L170T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Resistance :

170mOhm

Radiation Hardening :

No

Pin Count :

3

Drain to Source Breakdown Voltage :

60V

Number of Elements :

1

JESD-609 Code :

e3

Current Rating :

9A

Width :

6.22mm

ECCN Code :

EAR99

Length :

6.73mm

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn On Delay Time :

9.7 ns

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 25V

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1.7V

Number of Pins :

3

REACH SVHC :

No SVHC

Factory Lead Time :

2 Weeks

Fall Time (Typ) :

38 ns

Pulsed Drain Current-Max (IDM) :

27A

Number of Terminations :

2

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Continuous Drain Current (ID) :

9A

Power Dissipation :

28.5W

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

15V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

170m Ω @ 4.5A, 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Mounting Type :

Surface Mount

Voltage - Rated DC :

60V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±15V

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

9A

Surface Mount :

yes

Terminal Form :

Gull wing

Power Dissipation-Max :

1.5W Ta 28.5W Tj

Published :

2005

Turn-Off Delay Time :

10 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

Height :

2.38mm

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Rise Time :

69ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)