NTB90N02T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

733 mJ

Drain Current-Max (Abs) (ID) :

90A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

90A Ta

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 90A, 10V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Terminal Position :

Single

FET Type :

N-Channel

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

200A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2.12pF @ 20V

Power Dissipation-Max :

85W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

DS Breakdown Voltage-Min :

24V

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

24V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0058ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE