NTB90N02G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

85W

Current - Continuous Drain (Id) @ 25°C :

90A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

90ns

Avalanche Energy Rating (Eas) :

733 mJ

Pulsed Drain Current-Max (IDM) :

200A

JESD-609 Code :

e3

HTS Code :

8541.29.00.95

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current Rating :

90A

Pin Count :

3

Packaging :

Tube

Mounting Type :

Surface Mount

Fall Time (Typ) :

60 ns

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 90A, 10V

Voltage - Rated DC :

24V

Drain-source On Resistance-Max :

0.0058ohm

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

24V

Published :

2007

Number of Terminations :

2

Turn-Off Delay Time :

28 ns

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Continuous Drain Current (ID) :

90A

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

85W Tc

Number of Elements :

1

Terminal Form :

Gull wing

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2120pF @ 20V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED