NTB90N02T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

24V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 90A, 10V

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

733 mJ

Transistor Application :

SWITCHING

Number of Terminations :

2

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

No

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

200A

Surface Mount :

yes

Power Dissipation-Max :

85W Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

2.12pF @ 20V

FET Type :

N-Channel

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.0058ohm

Terminal Position :

Single

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

240

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

90A Ta

Drain Current-Max (Abs) (ID) :

90A

DS Breakdown Voltage-Min :

24V

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V