NTB90N02

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

235

Turn-Off Delay Time :

28 ns

Lead Free :

Contains Lead

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Current Rating :

90A

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

200A

Vgs (Max) :

±20V

Published :

2007

Power Dissipation :

85W

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 90A, 10V

Number of Elements :

1

Mounting Type :

Surface Mount

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e0

Continuous Drain Current (ID) :

90A

HTS Code :

8541.29.00.95

Terminal Finish :

Tin/Lead (Sn/Pb)

Pin Count :

3

Avalanche Energy Rating (Eas) :

733 mJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

24V

Drain-source On Resistance-Max :

0.0058ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2120pF @ 20V

Rise Time :

90ns

Current - Continuous Drain (Id) @ 25°C :

90A Ta

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

24V

Fall Time (Typ) :

60 ns

Power Dissipation-Max :

85W Tc

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Packaging :

Tube