NSVMUN5332DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Max Operating Temperature :

150°C

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Number of Pins :

6

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Min Operating Temperature :

-55°C

Number of Elements :

2

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

250mV

Lead Free :

Lead Free

Polarity/Channel Type :

NPN/PNP

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2012

Max Collector Current :

100mA

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Resistor - Base (R1) :

4.7k Ω

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Resistor - Emitter Base (R2) :

4.7k Ω

hFE Min :

15

Factory Lead Time :

8 Weeks

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

500nA