NSVDTA114EET1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Max Collector Current :

100mA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

200mW

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Power - Max :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

JESD-30 Code :

R-PDSO-G3

Lead Free :

Lead Free

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

250mV

Published :

2004

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transistor Type :

PNP - Pre-Biased

Package / Case :

SC-75, SOT-416

Resistor - Base (R1) :

10 k Ω

Factory Lead Time :

2 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

10 k Ω

Polarity/Channel Type :

PNP

Mount :

Surface Mount