NSV40301MDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Base Voltage (VCBO) :

40V

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

6V

Polarity :

NPN

ECCN Code :

EAR99

Transistor Type :

2 NPN (Dual)

Published :

2008

Factory Lead Time :

48 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Terminal Finish :

Tin (Sn)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

783mW

Number of Elements :

2

Max Power Dissipation :

653mW

Pin Count :

8

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2A 2V

Max Collector Current :

3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

115mV @ 200mA, 2A

Collector Emitter Voltage (VCEO) :

40V

Operating Temperature :

-55°C~150°C TJ

Frequency :

100MHz

Current - Collector (Ic) (Max) :

3A

Number of Pins :

8

Mounting Type :

Surface Mount

Pbfree Code :

yes

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

40V

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO