NSV40200UW6T1G

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Mfr.Part #
NSV40200UW6T1G
Manufacturer
onsemi
Package / Case
6-WDFN Exposed Pad
Datasheet
Download
Description
TRANS PNP 40V 2A 6WDFN
Stock
6,000
In Stock :
6,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tape and Reel (TR)
Current - Collector (Ic) (Max) :
2A
Collector Emitter Breakdown Voltage :
40V
JESD-609 Code :
e3
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
8 Weeks
Collector Base Voltage (VCBO) :
40V
Frequency :
140MHz
Max Power Dissipation :
875mW
Current - Collector Cutoff (Max) :
100nA ICBO
Emitter Base Voltage (VEBO) :
7V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Published :
2006
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
40V
Number of Elements :
1
Max Collector Current :
2A
Transistor Type :
PNP
Power Dissipation :
3W
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 1A 2V
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 20mA, 2A
Number of Pins :
6
Mount :
Surface Mount
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Package / Case :
6-WDFN Exposed Pad
Datasheets
NSV40200UW6T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSV40200UW6T1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Package / Case:6-WDFN Exposed Pad, NSV40200UW6T1G pinout, NSV40200UW6T1G datasheet PDF, NSV40200UW6T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSV40200UW6T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSV40200UW6T1G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 6-WDFN Exposed Pad Tape & Reel (TR) Surface Mount

NSV40200UW6T1G Overview


This device has a DC current gain of 150 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.The maximum collector current is 2A volts.

NSV40200UW6T1G Features


the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 300mV @ 20mA, 2A
the emitter base voltage is kept at 7V


NSV40200UW6T1G Applications


There are a lot of ON Semiconductor
NSV40200UW6T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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